کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5010449 1462208 2016 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low-frequency noise in bare SOI wafers: Experiments and model
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Low-frequency noise in bare SOI wafers: Experiments and model
چکیده انگلیسی
Low-frequency noise (LFN) measurements are largely used for interface quality characterization in MOSFETs. In this work, a detailed investigation of LFN technique applied to pseudo-MOSFETs in bare silicon-on-insulator (SOI) substrates is provided. A physical model capable to describe the experimental results is proposed and validated using different die areas and inter-probe distances. The effective silicon area contributing to the noise signal, the impact of defects induced by probes and the possibility to extract interface trap density are addressed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 125, November 2016, Pages 167-174
نویسندگان
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