Keywords: دروازه دی الکتریک; Organic transistor; Organic semiconductor; Silk fibroin; Gate dielectric; Hydroscopic; Crystal structure;
مقالات ISI دروازه دی الکتریک (ترجمه نشده)
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Keywords: دروازه دی الکتریک; Strontium-doped aluminum oxide; Gate dielectric; Solution process; Thin-film transistors;
Keywords: دروازه دی الکتریک; Graphene field effect transistor; Gate dielectric
Keywords: دروازه دی الکتریک; Flexible device; Organic thin film transistor; Gate dielectric; Device performance restore; Solution processing;
Keywords: دروازه دی الکتریک; Gate dielectric; Polyimide; Thin-film transistor;
Keywords: دروازه دی الکتریک; Organic thin film transistor; Gate dielectric; Chitosan; Natural rubber; DNA sensor;
Performance evaluation of free-silicon organic-inorganic hybrid (SiO2-TiO2-PVP) thin films as a gate dielectric
Keywords: دروازه دی الکتریک; Hybrid nanocomposite; Gate dielectric; OFETs; Free-silicon gate electrode;
Atomic layer-deposited (HfZrO4)1 â x(SiO2)x thin films for gate stack applications
Keywords: دروازه دی الکتریک; Hafnium zirconate - silicate; High dielectric constant; Gate dielectric; Electrical properties;
Ladder-type silsesquioxane copolymer gate dielectrics for gating solution-processed IGZO field-effect transistors
Keywords: دروازه دی الکتریک; Ladder-type poly(phenyl-co-methacryl silsesquioxane); Gate dielectric; Indium-gallium-zinc oxide; Transistor; Crosslink;
The low threshold voltage n-type silicon transistors based on a polymer/silica nanocomposite gate dielectric: The effect of annealing temperatures on their operation
Keywords: دروازه دی الکتریک; Nanocomposite N-type silicon transistor; Gate dielectric; Annealing process; Threshold voltage;
Structural and electrical properties of high-κ CeTixOy, ErTixOy and YbTixOy gate dielectrics for InZnSnO thin film transistors
Keywords: دروازه دی الکتریک; Indium-zinc-tin-oxide (IZTO); Thin-film transistor (TFT); CeTixOy; ErTixOy; YbTixOy; Gate dielectric;
Comparative study of atomic-layer-deposited HfO2/Al2O3, Hf0.8Al0.2Ox and Hf0.5Al0.5Ox on N-GaAs
Keywords: دروازه دی الکتریک; Gate dielectric; Interface trap density; GaAs;
One-pot surface modification of poly(ethylene-alt-maleic anhydride) gate insulators for low-voltage DNTT thin-film transistors
Keywords: دروازه دی الکتریک; Organic thin-film transistor; Gate insulator; Gate dielectric; Poly(ethylene-alt-maleic anhydride); Poly(maleic anhydride-alt-1-octadecene)
Crosslinked polymer-mixture gate insulator for high-performance organic thin-film transistors
Keywords: دروازه دی الکتریک; Organic thin-film transistor; Gate insulator; Gate dielectric; Cyanoethylated resin; Crosslinking;
Physical and electrical properties of bilayer CeO2/TiO2 gate dielectric stack
Keywords: دروازه دی الکتریک; Rare earth oxides; Thin film; Gate dielectric; High-κ
Effects of e-beam deposited gate dielectric layers with atmospheric pressure plasma treatment for IGZO thin-film transistors
Keywords: دروازه دی الکتریک; Atmospheric pressure plasma treatment; Gate dielectric; IGZO; Thin-film transistor;
Polyimide/polyvinyl alcohol bilayer gate insulator for low-voltage organic thin-film transistors
Keywords: دروازه دی الکتریک; Organic thin-film transistor; Gate insulator; Gate dielectric; Polyimide; Polyvinyl alcohol;
Atomic layer deposition of CeO2/HfO2 gate dielectrics on Ge substrate
Keywords: دروازه دی الکتریک; CeO2/HfO2; Atomic layer deposition; Ge substrate; Gate dielectric;
Interfacial study and band alignment of ultrathin La2Hf2O7 films on GaAs substrates
Keywords: دروازه دی الکتریک; 73.20.At; 73.40.Qv; 77.55.dj; 81.15.Fg; Band alignment; GaAs; Gate dielectric; Pulsed laser deposition;
Structural and electrical characteristics of high-κ ErTixOy gate dielectrics on InGaZnO thin-film transistors
Keywords: دروازه دی الکتریک; Indium-gallium-zinc oxide; High-dielectric constant; Gate dielectric; Thin-film transistors; Erbium titanium oxide
In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric
Keywords: دروازه دی الکتریک; Contact; Gate dielectric; Indium gallium arsenide; Multiple-gate transistors
Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC
Keywords: دروازه دی الکتریک; AlGAN/GaN; HEMT; MIS-HEMT; gate dielectric; self-heating
Free radical fast photo-cured gate dielectric for top-gate polymer field effect transistors
Keywords: دروازه دی الکتریک; Organic field-effect transistors; Gate dielectric; Insulator; Photo crosslinking;
Probing a two-step channel formation process in injection-type pentacene field-effect transistors by time-resolved electric-field-induced optical second-harmonic generation measurement
Keywords: دروازه دی الکتریک; Organic field-effect transistor; Electric-field-induced second-harmonic generation; Gate dielectric; Maxwell-Wagner effect; Local electric field; Surface polarization;
Atomic layer deposition and characterization of stoichiometric erbium oxide thin dielectrics on Si(1Â 0Â 0) using (CpMe)3Er precursor and ozone
Keywords: دروازه دی الکتریک; Atomic layer deposition; Erbium oxide; Gate dielectric; Tris(methylcyclopentadienyl)erbium; Ozone;
Effect of interfacial oxide on Ge MOSCAP and N-MOSFET characteristics
Keywords: دروازه دی الکتریک; Germanium; MOSCAP; MOSFET; Gate dielectric; Interface passivation; Ozone oxidation
Structural properties and electrical characteristics of high-k Dy2O3 gate dielectrics
Keywords: دروازه دی الکتریک; Dy2O3 film; Gate dielectric; Postdeposition annealing (PDA);
Analysis of interface trap density of metal–oxide-semiconductor devices with Pr2O3 gate dielectric using conductance method
Keywords: دروازه دی الکتریک; Interface trap density; Pr2O3; Gate dielectric; Conductance method
Flexible N-channel organic phototransistor on polyimide substrate
Keywords: دروازه دی الکتریک; Organic field-effect transistor; Phototransistor; Photoresponse; Gate dielectric; Organic semiconductor;
Enhancement of the electrical characteristics of MOS capacitors by reducing the organic content of H2O-diluted Spin-On-Glass based oxides
Keywords: دروازه دی الکتریک; Metal-Oxide-Semiconductor; Spin-On-Glass; Silicon dioxide (SiO2); Gate dielectric; Organic thin films; Fourier-Transform Infrared (FTIR) Spectroscopy
A poly(styrene-co-methyl methacrylate)/room-temperature sputtered hafnium oxide bi-layer dielectrics as gate insulator for a low voltage organic thin-film transistors
Keywords: دروازه دی الکتریک; Organic thin film transistor; Hafnium oxide; Random copolymer; Gate dielectric
Titanium–aluminum oxynitride (TAON) as high-k gate dielectric for sub-32 nm CMOS technology
Keywords: دروازه دی الکتریک; High-k; Ultra-thin films; Gate dielectric
Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy
Keywords: دروازه دی الکتریک; MgO; Rutile; Band offset; X-ray photoelectron spectroscopy; Gate dielectric; Dye-sensitized solar cells;
Low-voltage organic thin-film transistors with hydrophobic hafnium oxynitride film as gate insulator
Keywords: دروازه دی الکتریک; OTFT; HfON; Pentacene; Gate dielectric
Excellent heat resistance polymeric gate insulator for thin-film transistor by low temperature and solution processing
Keywords: دروازه دی الکتریک; Gate dielectric; Polyimide; Thin-film transistor
Investigation of organic n-type field-effect transistor performance on the polymeric gate dielectrics
Keywords: دروازه دی الکتریک; Organic field-effect transistors; Gate dielectric; Surface properties; Organic semiconductor
Influence of postdeposition annealing on structural properties and electrical characteristics of thin Tm2O3 and Tm2Ti2O7 dielectrics
Keywords: دروازه دی الکتریک; Tm2O3; Tm2Ti2O7; Gate dielectric; Interfacial SiO2; Silicate;
Electrical characteristics of Ge MOS device on Si substrate with thermal SiON as gate dielectric
Keywords: دروازه دی الکتریک; Ge MOS devices; Thermal SiON; Gate dielectric; Interface trap density; Conduction mechanism
Compositional, structural and electronic characteristics of HfO2 and HfSiO dielectrics prepared by radio frequency magnetron sputtering
Keywords: دروازه دی الکتریک; HfO2; HfSiO; Gate dielectric; Radio frequency magnetron sputtering
AlGaN/GaN MISHEMT with hBN as gate dielectric
Keywords: دروازه دی الکتریک; Gate dielectric; HBN thin film; HEMTs; MISHEMTs
Effect of post-deposition annealing on structural and electrical properties of high-k HoTiO3 gate dielectrics
Keywords: دروازه دی الکتریک; High-k; HoTiO3; Gate dielectric;
Control of threshold voltage of organic field-effect transistors by space charge polarization
Keywords: دروازه دی الکتریک; Organic field-effect transistors (OFETs); Threshold voltage shift; Polarization; Gate dielectric
Soluble pentacene thin-film transistor using a high solvent and heat resistive polymeric dielectric with low-temperature processability and its long-term stability
Keywords: دروازه دی الکتریک; 68.55ag; 68.55ajOrganic thin film transistors; Soluble pentacene; Polyimide; Gate dielectric
Programmable memory in organic field-effect transistor based on lead phthalocyanine
Keywords: دروازه دی الکتریک; 68.55.ag; 72.80.Le; 68.55.ajOrganic thin film transistors; Polymer; Gate dielectric; Memory; Phthalocyanine
Electrical and materials properties of AlN/ HfO2 high-k stack with a metal gate
Keywords: دروازه دی الکتریک; Aluminum nitride; Atomic layer deposition; Gate dielectric; High κ; High permittivity; Molecular layer deposition; Molybdenum nitride; Metal gate; Capping layer; Effective work function
Pentacene thin-film transistors with sol–gel derived amorphous Ba0.6Sr0.4TiO3 gate dielectric
Keywords: دروازه دی الکتریک; Pentacene; (Ba,Sr)TiO3; Gate dielectric; Sol–gel routes; Optical transmittance; Organic thin film transistors
Chemical vapor deposition of ZrxTi1âxO2 and HfxTi1âxO2 thin films using the composite anhydrous nitrate precursors
Keywords: دروازه دی الکتریک; 77.55.+f; 73.40.Qv; 81.15.Gh; ZrxTi1âxO2; HfxTi1âxO2; Gate dielectric; Anhydrous metal nitrate; Single-source precursor; CVD;
UV assisted low temperature nitridation and post deposition oxidation technique for hafnium oxide gate dielectric
Keywords: دروازه دی الکتریک; Nitrogen incorporation; Hafnium oxide; Gate dielectric; Oxygen diffusion activation energy;
Recovery of negative bias temperature instability induced degradation of p-MOSFETs with SiON gate dielectric
Keywords: دروازه دی الکتریک; MOSFET; Reliability; Silicon oxynitride; Gate dielectric; Negative bias temperature instability (NBTI)
Electrical method of measuring physical thickness and nitrogen concentration of silicon oxynitride gate dielectric for MOSFETs
Keywords: دروازه دی الکتریک; MOSFET; Gate dielectric; Silicon oxynitride; Equivalent oxide thickness; Physical oxide thickness