Free radical fast photo-cured gate dielectric for top-gate polymer field effect transistors

► We introduce three photo-curable formulations as dielectric for OFETs. ► We used a wetting agent to form thin films on the hydrophobic semiconductor. ► The wetting agent reduce also the flat band voltage shift of MIS structures. ► Transistors with on/off ratios between 105 and 106 and sub-threshold slopes between 0.44 and 1.42 V/dec were fabricated.