کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1268160 972396 2009 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Programmable memory in organic field-effect transistor based on lead phthalocyanine
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Programmable memory in organic field-effect transistor based on lead phthalocyanine
چکیده انگلیسی

A nonvolatile organic field-effect transistor (OFET) with a polymeric electret as gate insulator and spun cast film of lead phthalocyanine (PbPc) as semiconductor channel is reported. Hysteresis induced by gate–bias stress was exploited to study nonvolatile memory effects. The observation of the hysteresis and memory window is proposed to originate from charge storage in the polymeric electret. The on state retention time for the OFET memory device is more than 5 h and the device can reproduce continuous write–read–erase–read switching cycles.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 10, Issue 7, November 2009, Pages 1282–1287
نویسندگان
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