کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
752631 1462223 2015 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effects of dielectric material properties on graphene transistor performance
ترجمه فارسی عنوان
اثر خواص مواد دی الکتریک بر عملکرد ترانزیستور گرافن
کلمات کلیدی
ترانزیستور اثر گرافن گرافن، دروازه دی الکتریک
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
چکیده انگلیسی

Graphene has attracted attention due to its excellent electrical properties; however, the electrical performance of graphene devices, including device hysteresis, mobility, and conductivity, tends to be limited by the supporting dielectric layer properties. In this work, the impact of a dielectric material on a graphene transistor was investigated by fabricating graphene field effect transistors integrated with four different dielectric substrates (SiO2, Al2O3, Si3N4 and hexagonal boron nitride) and by comparing the transistor performances. Results revealed that the carrier transport characteristics of the graphene transistors, including the hysteresis, Dirac point shift, and mobility, were highly correlated with the hydrophobicity-induced charge trapping and surface optical phonon energies of the dielectric materials.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 109, July 2015, Pages 8–11
نویسندگان
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