Titanium–aluminum oxynitride (TAON) as high-k gate dielectric for sub-32 nm CMOS technology

High-k insulators for the next generation (sub-32 nm CMOS (complementary metal–oxide–semiconductor) technology), such as titanium–aluminum oxynitride (TAON) and titanium–aluminum oxide (TAO), have been obtained by Ti/Al e-beam evaporation, with additional electron cyclotron resonance (ECR) plasma oxynitridation and oxidation on Si substrates, respectively. Physical thickness values between 5.7 and 6.3 nm were determined by ellipsometry. These films were used as gate insulators in MOS capacitors fabricated with Al electrodes, and they were used to obtain capacitance–voltage (C–V) measurements. A relative dielectric constant of 3.9 was adopted to extract the equivalent oxide thickness (EOT) of films from C–V curves under strong accumulation condition, resulting in values between 1.5 and 1.1 nm, and effective charge densities of about 1011 cm−2. Because of these results, nMOSFETs with Al gate electrode and TAON gate dielectric were fabricated and characterized by current–voltage (I–V) curves. From these nMOSFETs electrical characteristics, a sub-threshold slope of 80 mV/dec and an EOT of 0.87 nm were obtained. These results indicate that the obtained TAON film is a suitable gate insulator for the next generation (MOS) devices.