Keywords: بالا K; CMOS; MOSFET; Downsizing; FinFET; High-k
مقالات ISI ترجمه شده بالا K
مقالات ISI بالا K (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Keywords: بالا K; MIM capacitors; Time-dependent-dielectric-breakdown; Hafnium oxide; High-K; Thin-film transistors;
Keywords: بالا K; High-k; Reactive magnetron sputtering; Post deposition annealing; Constant current stress;
Keywords: بالا K; Indium-tungsten-oxide; Thin-film transistors; Multi-stacked active layer; High-k; Interfacial layer engineering;
Keywords: بالا K; Dioritic magma; High-K; Porphyry Cu-Au mineralization; Pulang; Yidun arc;
Keywords: بالا K; MoS2; Top-gated transistor; HfO2; Al2O3; High-k; Substrate;
Keywords: بالا K; DG-MOSFETs; UTB-SOI; High-k; Trapped charges; Analog/RF FOMs; ZTC point
Keywords: بالا K; MIM-capacitor; High-k; Reliability;
Keywords: بالا K; High-k; Hafnia; Au; Annealing
Keywords: بالا K; Reliability; InGaAs; MOSFET; High-k; Logic
Electrical stress probing recovery efficiency of 28â¯nm HK/MG nMOSFETs using decoupled plasma nitridation treatment
Keywords: بالا K; DPN; Gate leakage; Degradation; Tunneling; High-k; nMOSFET; Recovery;
High resistance ratio of bipolar resistive switching in a multiferroic/high-K Bi(Fe0.95Cr0.05)O3/ZrO2/Pt heterostructure
Keywords: بالا K; Multiferroic Bi(Fe0.95Cr0.05)O3; High-K; Resistive switching; Ferroelectric polarization;
Influences of surface treatment on In0.53Ga0.47As epitaxial layer grown on silicon substrate using trimethylaluminum
Keywords: بالا K; Indium gallium arsenide; Epitaxial layer; Silicon; High-k; Dielectric constant; Atomic layer deposition; Trimethylaluminum; Capacitance density;
Enhanced nucleation and growth of HfO2 thin films grown by atomic layer deposition on graphene
Keywords: بالا K; High-k; HfO2; Nucleation; Atomic layer deposition; Graphene;
Memory improvement with high-k buffer layer in metal/ SrBi2Nb2O9/Al2O3/silicon gate stack for non-volatile memory applications
Keywords: بالا K; Ferroelectric; High-k; Hysteresis; Memory window; PUND; SBN;
A comprehensive study on usage of Gd2O3 dielectric in MOS based radiation sensors considering frequency dependent radiation response
Keywords: بالا K; Radiation sensor; Gd2O3; Frequency; MOS; High-k; Gamma response;
Performance improvements of tungsten and zinc doped indium oxide thin film transistor by fluorine based double plasma treatment with a high-K gate dielectric
Keywords: بالا K; Indium-tungsten-zinc-oxide; Thin-film transistors; Remote plasma treatment; High-k; Fluorine based double plasma treatment;
Electronic structure of La2O3/Si interface by in situ photoemission spectroscopy
Keywords: بالا K; La2O3; High-k; Structural; X-ray techniques; Interface;
Enhanced reliability and capacitance stability of ZrO2-based decoupling capacitors by interface doping with Al2O3
Keywords: بالا K; High-k; Dielectric; Atomic layer deposition; MIM capacitor;
Infrared spectroscopic analysis of reactively formed La-silicate interface layer at La2O3/Si substrates
Keywords: بالا K; La-silicate; High-k; Interface reaction; FTIR;
The Co-60 gamma-ray irradiation effects on the Al/HfSiO4/p-Si/Al MOS capacitors
Keywords: بالا K; HfSiO4 MOS capacitors; Irradiation Hard Material; Interface states; Oxide trapped charges; High-k;
Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor
Keywords: بالا K; High-k; SRAM; Junctionless transistor; Dual metal gate engineering; TCAD;
Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications
Keywords: بالا K; Atomic layer deposition; Composite channel; Drain-current enhancement; High-K; InAs; InGaAs MOSFETs; InP; Leakage;
Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealing
Keywords: بالا K; Border traps; High-k; InGaAs; CV hysteresis; Accumulation frequency dispersion; Forming gas annealing;
Effect of interface traps for ultra-thin high-k gate dielectric based MIS devices on the capacitance-voltage characteristics
Keywords: بالا K; Al2O3/Si interface; High-k; Metal/insulator/semiconductor (MIS); Numerical simulation; Interface state density; C-V characteristics;
Design of high breakdown voltage vertical GaN p-n diodes with high-K/low-K compound dielectric structure for power electronics applications
Keywords: بالا K; Gallium nitride; Diode; Breakdown voltage; High-K; Low-K; Vertical; Power device;
Technology and characterization of MIS structures with co-doped silicon nanocrystals (Si-NCs) embedded in hafnium oxide (HfOx) ultra-thin layers
Keywords: بالا K; Co-doped silicon nanocrystals; MIS structure; High-k; Characterization;
Study of strained-Si p-channel MOSFETs with HfO2 gate dielectric
Keywords: بالا K; High-K; Strained-Si; Phonon scattering;
Interface traps in Al/HfO2/SiO2/4H-SiC metal-insulator-semiconductor (MIS) structures studied by the thermally-stimulated current (TSC) technique
Keywords: بالا K; 4H-SiC; Thermally-stimulated current; TSC; High-k; MOS structure
Interface and electrical properties of ultra-thin HfO2 film grown by radio frequency sputtering
Keywords: بالا K; Thin film; rf sputtering; High-k
A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices
Keywords: بالا K; Quantum tunneling; High-k; MOS; Tunneling probability; Image force; Tunneling resistivity
Mixed-mode simulation and analysis of 3D double gate junctionless nanowire transistor for CMOS circuit applications
Keywords: بالا K; Junctionless transistor; Inverter; Mixed mode simulation; High-K; Universal gates;
Electrical characteristics of ALD La2O3 capping layers using different lanthanum precursors in MOS devices with ALD HfO2, HfSiOx, and HfSiON gate dielectrics
Keywords: بالا K; High-k; VFB shift; La2O3; Atomic layer deposition; EOT;
Gate leakage current suppression and reliability improvement for ultra-low EOT Ge MOS devices by suitable HfAlO/HfON thickness and sintering temperature
Keywords: بالا K; Ge MOS; High-k; HfON; HfAlO; Sintering; EOT
Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation
Keywords: بالا K; Gallium nitride; High-k; Band alignment; X-ray photoelectron spectroscopy
The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs
Keywords: بالا K; HEMT; Breakdown voltage; AlGaN; GaN; High-k; Relative permittivity; Passivation; Schottky contact
Comparison of electrical characteristics for SiONx and HfZrOx gate dielectrics of MOSFETs with decoupled plasma nitridation treatment
Keywords: بالا K; High-K; SiON; MOSFET; Metal-gate; Drive current
Improved electrical characteristics of high-k gated MOSFETs with post-growth treatment on interfacial layer
Keywords: بالا K; Interfacial layer; High-k; Desorption; Re-growth
An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis
Keywords: بالا K; High-k; Dielectrics; Nanoscale; Failure; Reliability;
Band alignment of atomic layer deposited high-k Al2O3/multilayer MoS2 interface determined by X-ray photoelectron spectroscopy
Keywords: بالا K; Multilayer MoS2; High-k; Band alignment; X-ray photoelectron spectroscopy
Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics
Keywords: بالا K; Lanthanum oxide; Interface structure; High-k; CMOS technology
Temperature dependence inflection point in Ultra-Thin Si directly on Insulator (SDOI) MOSFETs: An influence to key performance metrics
Keywords: بالا K; DG-MOSFETs; UT-SDOI; High-k; Trapped charges; Static and dynamic FOMs; TCP
Effect of film properties for non-linear DPL model in a nanoscale MOSFET with high-k material: ZrO2/HfO2/La2O3
Keywords: بالا K; MOSFET; Bulk/film thermal properties; Non-Fourier model; Nanoscale; SiO2; Multi-layer; High-k
On the scaling of subnanometer EOT gate dielectrics for ultimate nano CMOS technology
Keywords: بالا K; Nano CMOS; Subnanometer EOT; Gate dielectrics; High-k
Effect of nitrogen containing plasma on interface properties of sputtered ZrO2 thin films on silicon
Keywords: بالا K; High-K; Reactive sputtering; Nitrogen plasma; Zirconium dioxide
A study on the electrical characteristics of InGaZnO thin-film transistor with HfLaO gate dielectric annealed in different gases
Keywords: بالا K; Amorphous InGaZnO (a-IGZO); Thin-film transistor (TFT); HfLaO; High-k; Annealing gas
Electrical characterization of thulium silicate interfacial layers for integration in high-k/metal gate CMOS technology
Keywords: بالا K; TmSiO; LaSiO; Silicate; Interfacial layer; High-k
Atomic layer deposition of Y2O3 and yttrium-doped HfO2 using a newly synthesized Y(iPrCp)2(N-iPr-amd) precursor for a high permittivity gate dielectric
Keywords: بالا K; High-k; Rare earth; HfO2; Y2O3; Dielectric constant; Yttrium; Leakage current; Gate oxide; ALD; Atomic layer deposition; Precursor;
Effect of RF power of post-deposition oxygen treatment on HfO2 gate dielectrics
Keywords: بالا K; High-k; HfO2; ALD; RF power; Electrical characteristics; Reliability;
Composite HfO2/Al2O3-dielectric AlGaAs/InGaAs MOS-HEMTs by using RF sputtering/ozone water oxidation
Keywords: بالا K; MOS-HEMT; High-k; Stacked gate dielectrics; InGaAs/AlGaAs;