کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
728650 1461427 2014 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of nitrogen containing plasma on interface properties of sputtered ZrO2 thin films on silicon
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Effect of nitrogen containing plasma on interface properties of sputtered ZrO2 thin films on silicon
چکیده انگلیسی

The present paper deals with the electrical characterization of sputtered ZrO2/Si interface deposited in N2 containing plasma. Incorporation of nitrogen in the sputter deposited films was confirmed by glancing angle X-Ray diffraction measurement. MOS C–V and I–V techniques were used for interface characterization. Nitrogen incorporated ZrO2 MOS capacitors exhibited higher breakdown voltage and lower leakage current than structures having ZrO2 dielectric films sputtered in pure argon atmosphere. Different device parameters such as flat band voltage, leakage current, breakdown voltage, charge defects were extracted and compared with and without nitrogen incorporated ZrO2/Si MOS capacitor structures. The effect of post deposition annealing on the electrical behavior of ZrO2/Si interface was also investigated.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 19, March 2014, Pages 145–149
نویسندگان
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