کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11003603 | 1461359 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Lifetime of hafnium oxide dielectric in thin-film devices fabricated on deformable softening polymer substrate
ترجمه فارسی عنوان
طول عمر دی الکتریک اکسید هافنیوم در دستگاه های نازک فیلم ساخته شده بر روی بستر پلیمری نرم کننده تغییر شکل پذیر
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
چکیده انگلیسی
In this work, we investigate the electrical behavior and reliability of thin-film devices using a high-k dielectric on top of softening polymer. Hafnium oxide (HfO2) 50â¯nm thick was used for gate dielectric in both capacitors and thin-film transistors (TFTs) and is deposited by atomic layer deposition at 100â¯Â°C. A thermoset thiol-ene/acrylate shape memory polymer (SMP) is used as flexible substrate with softening properties. The SMP belongs to a class of mechanically active materials used to store a metastable shape and return to a globally stable shape upon activation by stimuli, such as temperature, which softens the polymer via a decrease in storage modulus. An average dielectric constant of 13.6 was obtained for the HfO2 layer after an annealing treatment at 200â¯Â°C for two hours in forming gas. Here, a clear dependence between the electrical behavior and the device dimensions was observed. In the same experimental process, indium-gallium-zinc-oxide TFTs with different dimensions were fabricated showing mobility values of approximately 17â¯cm2/V-s, presenting similar dependence on channel dimensions. Finally, the lifetime projection of the HfO2 film was estimated from a time-dependent-dielectric-breakdown and leakage current analysis.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 88, December 2018, Pages 273-277
Journal: Materials Science in Semiconductor Processing - Volume 88, December 2018, Pages 273-277
نویسندگان
G. Gutierrez-Heredia, H.A. Pineda-Leon, A. Carrillo-Castillo, O. Rodriguez-Lopez, M. Tishechkin, K.M. Ong, J.S. Castillo, W.E. Voit,