Interface traps in Al/HfO2/SiO2/4H-SiC metal-insulator-semiconductor (MIS) structures studied by the thermally-stimulated current (TSC) technique

• Thermally stimulated current (TSC) measurement of the HfO2/SiO2/SiC MOS structure
• Methodology of the TSC analysis is discussed for wide-bandgap semiconductors and double dielectrics.
• Analysis of thermally stimulated current line-shape is not useful for complex MOS structure on wide-bandgap semiconductors.
• The trap profile is discussed taking into account SiO2/SiC and SiO2/HfO2 interfaces.

Thermally-stimulated current (TSC) is presented as a powerful technique for investigation of shallow interface traps in metal-insulator-semiconductor (MIS) structures fabricated on wide bandgap semiconductors. This work highlighted often made mistakes during the characterization of MIS structures with this technique which was originally used for the characterization of the structures on silicon. Accuracy of the results can be significantly improved by the implementation of the proposed methods of analysis.

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