Atomic layer deposition and characterization of stoichiometric erbium oxide thin dielectrics on Si(1Â 0Â 0) using (CpMe)3Er precursor and ozone

► Atomic layer deposition of erbium oxide from (CpMe)3Er and ozone. ► Stoichiometric erbium oxide atomic layer deposition. ► Carbon-free atomic layer deposited erbium oxide. ► Interfacial erbium silicate formation at 800 °C or higher temperatures. ► Hysteresis of 50 mV and leakage current density of 10−7 A cm−2 at 1 MV cm−1.