Structural properties and electrical characteristics of high-k Dy2O3 gate dielectrics

▶ We report the structural properties and electrical characteristics of thin Dy2O3 dielectrics deposited on Si substrates through reactive sputtering. ▶ The structural and morphological features of these films after postdeposition annealing were studied by X-ray diffraction and X-ray photoelectron spectroscopy. ▶ We found that Dy2O3 dielectrics annealed at 700 °C exhibit a thinner capacitance equivalent thickness and better electrical properties.