کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8150972 | 1524427 | 2014 | 34 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Development of the vertical Bridgman technique for 6-inch diameter c-axis sapphire growth supported by numerical simulation
ترجمه فارسی عنوان
توسعه تکنیک بریجمن عمودی برای رشد قارچ محور قطر 6 اینچ با استفاده از شبیه سازی عددی
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
چکیده انگلیسی
Based on the growth of 3-inch diameter c-axis sapphire using the vertical Bridgman (VB) technique, numerical simulations were made and used to guide the growth of a 6-inch diameter sapphire. A 2D model of the VB hot-zone was constructed, the seeding interface shape of the 3-inch diameter sapphire as revealed by green laser scattering was estimated numerically, and the temperature distributions of two VB hot-zone models designed for 6-inch diameter sapphire growth were numerically simulated to achieve the optimal growth of large crystals. The hot-zone model with one heater was selected and prepared, and 6-inch diameter c-axis sapphire boules were actually grown, as predicted by the numerical results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 402, 15 September 2014, Pages 83-89
Journal: Journal of Crystal Growth - Volume 402, 15 September 2014, Pages 83-89
نویسندگان
Chihiro Miyagawa, Takumi Kobayashi, Toshinori Taishi, Keigo Hoshikawa,