Characterization of detector-grade CdZnTe:Al crystals obtained by annealing

Detector-grade CdZnTe:Al (CZT:Al) crystals were obtained by introducing Te antisites after annealing under Te atmosphere. Characterizations revealed that no inclusions were observed in both the as-grown and the annealed crystals. The resistivity and IR transmittance of annealed CZT:Al crystals were greatly enhanced. Moreover, (D0,X) peak representing the quality of crystal appeared in PL spectrum of annealed crystal. 120 h annealed CZT:Al crystal with the energy resolution of 8.19% and μτ value of 1.18×10−3 cm2/V had the best detector performance.