Two-step thermal process in tellurium vapor for tellurium inclusion annealing in high resistivity CdZnTe crystals

In this article, the effect of different thermal annealing process on the concentration of inclusions down to 1 μm size is studied. A two-step process in tellurium vapors has been shown to be effective to anneal large tellurium inclusions and to preserve the high resistivity of the samples as well.