Keywords: A1 نقص های دوره; 00-01; 99-00; A1. Defects; A1. Impurities; A1.Surface structure; A1. Volume defects; A1. Segregation; B3. Solar Cells;
مقالات ISI A1 نقص های دوره (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Keywords: A1 نقص های دوره; A1. Segregation; A1. Volume defects; A2. Growth from melt; B1. Oxides; B2. Dielectric materials;
Measurement and evaluation of the defects in Cd1âxZnxTe materials by observing their etch pits in real time
Keywords: A1 نقص های دوره; A1. Defects; A1. Etching; A1. Line defects; A1. Volume defects; B2. Semiconducting II-VI materials;
Hot-pressed production and laser properties of ZnSe:Fe2+
Keywords: A1 نقص های دوره; A1. Recrystallization; A1. Volume defects; A1. Doping; B2. Semiconducting II-VI; B3. Solid state lasers;
Oxygen precipitation behavior in heavily arsenic doped silicon crystals
Keywords: A1 نقص های دوره; A2. Czochralski method; B2. Semiconducting silicon; A1. Characterization; A1. Volume defects;
A new heating stage for high Temperature/low fO2 conditions
Keywords: A1 نقص های دوره; A1. Volume defects; A1. Crystal morphology; A2. Growth from vapor; A2. Natural crystal growth; B1. Minerals; B3. High temperature heating stage;
Two-step thermal process in tellurium vapor for tellurium inclusion annealing in high resistivity CdZnTe crystals
Keywords: A1 نقص های دوره; A1. Volume defects; A1. Radiation detectors; B1. Cadmium compounds; B2. Semiconducting II/VI materials; B2. CdZnTe;
Characterization and evaluation of extended defects in CZT crystals for gamma-ray detectors
Keywords: A1 نقص های دوره; A1. Defects; A1. Volume defects; A1. Radiation; B2. Semiconducting materials
Etch pits of precipitates in CdZnTe crystals on (1Â 1Â 1) B surface
Keywords: A1 نقص های دوره; A1. Etching; A1. Volume defects; B1. Cadmium compounds; B2. Semiconducting II-VI materials;
Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films
Keywords: A1 نقص های دوره; A1. Nanostructures; A1. Line defects; A1. Volume defects; A1. Etching; A3. Metalorganic chemical vapor deposition; B1. Nitrides;
Impact of the H2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si
Keywords: A1 نقص های دوره; A1. Surface structure; A1. Volume defects; A1. Diffusion; A1. Stresses; A3. Chemical vapor deposition processes; B2. Semiconducting germanium
Grown-in defects in silicon produced by agglomeration of vacancies and self-interstitials
Keywords: A1 نقص های دوره; 61.72.–y; 61.72.Ji; 61.72.Cc; 61.82.FkA1. Computer simulation; A1. Impurities; A1. Nucleation; A1. Point defects; A1. Volume defects; B2. Semiconducting silicon
Inclusions in LEC-grown Si GaAs single crystals
Keywords: A1 نقص های دوره; 61.50.Nw; 61.72.ây; 61.72.Lk; 61.72.Qq; 81.05.Ea; 81.10.Fq; 81.30.Fb; A1. Volume defects; A2. LEC; B1. Gallium arsenide; B2. Semiinsulating gallium arsenide; B3. Tansistors;
Thermodynamics and kinetic theory of nucleation and the evolution of liquid precipitates in gallium arsenide wafer
Keywords: A1 نقص های دوره; 8.60.Nh; 82.20.Db; 82.20.--w; 61.72.Bb; 61.72.Qq; 64.70.DvA1. Diffusion; A1. Interface; A1. Nucleation; A1. Phase diagrams; A1. Phase transition; A1. Stresses; A1. Volume defects; B2. Semiconducting gallium arsenide
High-throughput zone-melting recrystallization for crystalline silicon thin-film solar cells
Keywords: A1 نقص های دوره; 81.10.Fq; 68.55.Ln; 81.05.Cy; 84.60.JtA1. Recrystallization; A1. Volume defects; B1. Elemental solids; B2. Semiconducting silicon; B3. Solar cellsCP133, Chemical polish etch consisting of H2O, HF, HNO3, CH3COOH; CSiTF, Crystalline silicon thin film; CVD,
Defects in p-doped bulk GaN crystals grown with Ga polarity
Keywords: A1 نقص های دوره; 68.35.Dv; 68.37.âd; 68.55.Ln; A1. Volume defects; A2. Growth from high-temperature solutions; B1. Nitrides;
The effect of nitrogen on void formation in Czochralski silicon crystals
Keywords: A1 نقص های دوره; 61.72.ây; 61.72.Ji; 61.72.Cc; 61.82.Fk; A1. Computer simulation; A1. Impurities; A1. Nucleation; A1. Point defects; A1. Volume defects; B2. Semiconducting silicon;