Intrinsic point defect behavior in silicon crystals during growth from the melt: A model derived from experimental results

► We argue Voronkov's model by the ratio of growth rate to thermal gradient on point defects created in Si. ► Thermal gradient lowers with raising growth rate and this is essential to our model. ► Only vacancy exists on growth interface and self-interstitial is created over a thermal stress. ► Perfect Si is obtained by equally combining with self-interstitial and vacancy from growth interface.