کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489747 | 1524372 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of p-type ZnOS films by pulsed laser deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth of p-type ZnOS films by pulsed laser deposition Growth of p-type ZnOS films by pulsed laser deposition](/preview/png/5489747.png)
چکیده انگلیسی
ZnO1âxSx films were deposited on quartz substrates by pulsed laser deposition (PLD) of ZnO1âxSx targets. The ZnO1âxSx films with S-contents of 0.03-0.17 were grown from the ZnO1âxSx targets sulfured at temperatures of 200 and 500 °C. The resistivity of the ZnO1âxSx films is slightly increased with the S-content. An increase of the O2-partial pressure in an atmosphere reduces the S-content in the films and drastically enhances the resistivity of the films. However, the carrier type of the films is still n-type. In order to incorporate excess S atoms into films, evaporation of Sulfur was performed during the PLD process. As a temperature of the S-evaporation is raised, the resistivity of the films is significantly enhanced and hole-conductivity appears in the films grown by the S-evaporation at 80 and 90 °C. By X-ray photoelectron spectroscopic measurements, the presence of SOx species is confirmed for the p-type ZnO1âxSx film. Both interstitial SO3 or SO4 clusters and complexes of Zn-vacancy with H are considered to be appropriate acceptors responsible for the hole-conductivity at room temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 457, 1 January 2017, Pages 289-293
Journal: Journal of Crystal Growth - Volume 457, 1 January 2017, Pages 289-293
نویسندگان
Kenkichiro Kobayashi, Tohru Ohtsuki, Yasumasa Tomita, Yosiumi Kohno, Yasuhisa Maeda, Shigenori Matsushima,