Growing technology and luminescent characteristics of ZnSe doped crystals

Problems related to the development of physico-technological foundations of preparation of scintillation materials on the basis of zinc selenide with AIIBVI isovalent dopants, as well as complex studies of properties of new semiconductor scintillators are considered. Processes have been studied of formation and transformation of the complex lattice defects that play the role of luminescence centers in AIIBVI-based scintillators. Technological methods have been developed for preparation of a series of practically important scintillation materials of high efficiency, with the absolute light output up to 80,000 photon/MeV, a diversity of spectral-kinetic luminescence properties and up to 109 rad radiation stability. It has been shown that such specific features of scintillators properties as high light output, relatively small atomic number, “fast” or “slow” scintillation kinetics, very low afterglow level (less than 0.01%), allow the development of novel detection systems for multi-energy radiography with improved sensitivity, as well as other radiation sensitive devises.

► We described a model for interaction of isovalent dopants with point defects in ZnSe.
► We showed a decisive role of isovalent dopants in formation of luminescence centers.
► Luminescence mechanisms in ZnSe-doped scintillators are determined.