Influence of grown-in defects on final oxygen precipitates during heat treatment of Cz-Si wafer analyzed by a coupled model with the interaction of point defects, oxygen precipitates, and dislocation loops

• Check the influence of crystal growth process on final oxygen precipitates.
• Use a model considering oxygen precipitates, point defects, and dislocation loops.
• Essential to control grown-in oxygen precipitate size and density, and net Si vacancy.
• By well controlling three parameters, possible to remove the influence of crystal growth process.
• Reduction of V/G can decrease grown-in oxygen precipitates.

To illuminate the role of crystal growth process on final oxygen precipitates during heat treatment of Cz-Si wafer, a coupled model, including the interaction of oxygen precipitates, point defects, and dislocation loops, has been used to test the influence of grown-in defects generated during crystal growth process. Several grown-in defect parameters such as density and size of oxygen precipitates and concentration of net silicon interstitials were checked. Results show that it is essential to control grown-in oxygen precipitate size and density, and net Si vacancy. By well controlling the three parameters less than some values, it is possible to remove the influence of crystal growth process on the final oxygen precipitates after heat treatment of Cz-Si wafer. Simple 1D results clearly demonstrates that it is feasible to control grown-in oxygen precipitates during crystal growth process.