Distribution of zinc, resistivity, and photosensitivity in a vertical Bridgman grown Cd1−xZnxTe ingot

We present the results of a comprehensive study of distribution of zinc, resistivity, and photosensitivity in a Cd1−xZnxTe ingot grown by the vertical Bridgman method. We used several complementary methods, viz., glow discharge mass spectroscopy, photoluminescence, resistivity-, and photosensitivity-mapping, along with photo-induced current transient spectroscopy to characterize the material. We identified electronic levels in the bandgap responsible for compensation, recombination, and photosensitivity.