کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1794916 | 1023709 | 2009 | 5 صفحه PDF | دانلود رایگان |
Positron annihilation is an established technique for investigating vacancy-type defects in semiconductors. When a positron is implanted into solids, it annihilates with an electron and emits two 511 keV γ quanta. From measurements of Doppler broadening spectra of the annihilation radiation and the positron lifetimes, one can detect vacancy-type defects such as monovacancies and divacancies. We used monoenergetic positron beams to study vacancies in ion-implanted and rare-earth-doped GaN. We identified the defect species and estimated their concentrations from a comparison between the Doppler broadening spectra obtained through the experiments and those calculated using first-principles calculation (projector augmented-wave method). We have thus shown that positron annihilation is a useful tool for studying relationships between vacancy-type defects and properties of group-III nitrides.
Journal: Journal of Crystal Growth - Volume 311, Issue 10, 1 May 2009, Pages 3075–3079