کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795330 | 1524483 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Properties of low-temperature-grown InAs and their changes upon annealing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
InAs layers grown by molecular beam epitaxy at 150-350 °C were characterized by electron probe microanalysis (EPMA), high resolution X-ray diffraction (HRXRD), Hall measurements, and secondary ion mass spectrometry (SIMS). EPMA revealed that the As mole fractions in the layers grown at 150-200 °C are higher by about 0.5% than those in the layers grown at 300-350 °C. HRXRD measurements revealed that the layers grown at 150-200 °C have larger lattice spacings than the InAs substrate by about 0.02%. Hall measurements revealed that the free-electron concentration in the layer grown at 200 °C is as high as 1.4Ã1019 cmâ3 while such a high concentration of impurities cannot be detected by SIMS. Upon annealing at higher temperatures than 250 °C, both the lattice spacing and the free-electron concentration of the layer grown at 200 °C were observed to decrease. These phenomena can be reasonably attributed to antisite As.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volumes 301â302, April 2007, Pages 256-259
Journal: Journal of Crystal Growth - Volumes 301â302, April 2007, Pages 256-259
نویسندگان
M. Shiba, R. Ikariyama, M. Takushima, Y. Kajikawa,