کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1792688 1023654 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Optical probing of low-pressure solution grown GaN crystal properties
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Optical probing of low-pressure solution grown GaN crystal properties
چکیده انگلیسی

The structural and optical properties of self-nucleated crystals grown by a near atmospheric pressure solution growth method are presented. High-resolution room temperature Raman scattering studies demonstrate that stress-free crystals with low free-electron background have been produced. Low and room temperature photoluminescence experiments confirm the presence of shallow donors and an unknown shallow acceptor. Large relative intensity variations of the emission bands assigned to recombination process involving donors and acceptor, resulting from significant changes in the incorporation and/or activation of defect associated with each recombination channel, reflect major changes in the intrinsic material properties.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 18, 1 September 2010, Pages 2564–2568
نویسندگان
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