Growth temperature dependence of the background doping in MOVPE-grown InAs

The free carrier concentration and compensation ratio of unintentionally doped InAs were reliably determined by evaluating the conduction characteristics of as-grown and hydrogenated epilayers. The free carrier concentration has also been obtained using steady-state capacitance measurements performed on p–i–n diodes fabricated using various growth conditions. The influence the growth temperature has on the electrical characteristics of unintentionally doped InAs thin films is presented.

► Determined the background doping of MOVPE grown InAs using galvanometric measurements.
► Determined InAs conduction properties by comparing as-grown and hydrogenated epilayers.
► Concluded that the InAs background doping decreases with increasing growth temperature.