کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1792003 | 1524475 | 2012 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Growth temperature dependence of the background doping in MOVPE-grown InAs Growth temperature dependence of the background doping in MOVPE-grown InAs](/preview/png/1792003.png)
The free carrier concentration and compensation ratio of unintentionally doped InAs were reliably determined by evaluating the conduction characteristics of as-grown and hydrogenated epilayers. The free carrier concentration has also been obtained using steady-state capacitance measurements performed on p–i–n diodes fabricated using various growth conditions. The influence the growth temperature has on the electrical characteristics of unintentionally doped InAs thin films is presented.
► Determined the background doping of MOVPE grown InAs using galvanometric measurements.
► Determined InAs conduction properties by comparing as-grown and hydrogenated epilayers.
► Concluded that the InAs background doping decreases with increasing growth temperature.
Journal: Journal of Crystal Growth - Volume 340, Issue 1, 1 February 2012, Pages 13–17