کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148991 | 1524347 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE](/preview/png/8148991.png)
چکیده انگلیسی
Doping of Ga(Al)N layers by plasma-assisted molecular beam epitaxy in Ga-rich conditions on c-plane bulk GaN substrates was studied. Ga(Al)N samples, doped with Mg or Si, grown using different growth conditions were compared. In contrast to Si doped layers, no change in the Mg concentration was observed for layers grown using different growth rates for a constant Mg flux and constant growth temperature. This effect enables the growth of Ga(Al)N:Mg layers at higher growth rates, leading to shorter growth time and lower residual background doping, without the need of increasing Mg flux. Enhancement of Mg incorporation for Al containing layers was also observed. Change of Al content from 0% to 17% resulted in more than two times higher Mg concentration.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 482, 15 January 2018, Pages 56-60
Journal: Journal of Crystal Growth - Volume 482, 15 January 2018, Pages 56-60
نویسندگان
Henryk Turski, Grzegorz MuzioÅ, Marcin Siekacz, Pawel Wolny, Krzesimir Szkudlarek, Anna Feduniewicz-Å»muda, Krzysztof Dybko, Czeslaw Skierbiszewski,