کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148494 | 1524332 | 2018 | 19 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD](/preview/png/8148494.png)
چکیده انگلیسی
The availability of high quality, free-standing GaN substrates enables new device applications in III-nitrides, especially for vertical device structures. With the introduction of these native substrates, the properties of nitrides are no longer dominated by defects introduced by heteroepitaxial growth. However, additional materials challenges are coming to the forefront that need to be understood and surmounted in order to allow homoepitaxial devices to achieve their full potential. In this paper, 2â¯Î¼m of UID GaN are grown simultaneously by MOCVD on three commercially sourced 2â³ HVPE wafers. By doing so, the substrates are exposed to the exact same growth conditions and the influence of the substrate can be unambiguously identified. The results are presented in regards to the effects of the substrates on epitaxial film morphology, uniformity, impurity incorporation, substrate/epitaxy interface, and electrical properties.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 498, 15 September 2018, Pages 352-356
Journal: Journal of Crystal Growth - Volume 498, 15 September 2018, Pages 352-356
نویسندگان
J.K. Hite, T.J. Anderson, L.E. Luna, J.C. Gallagher, M.A. Mastro, J.A. Freitas, C.R. Jr.,