کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10142782 | 1646111 | 2018 | 24 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth kinetics of basic ammonothermal gallium nitride crystals
ترجمه فارسی عنوان
سینتیک رشد از کریستال نیترید گالیوم آمونوترمال پایه
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
چکیده انگلیسی
The ammonothermal method has been extensively studied for the last two decades because of its potential to produce high-quality bulk gallium nitride (GaN) boules at low cost. Currently, the ammonothermal literature lacks in situ, internal fluid temperature measurements during the crystal growth process. This study reports on internal fluid temperature measured simultaneously in the dissolution and growth zones for twelve basic ammonothermal GaN growth experiments (pressure rangeâ¯=â¯180-261â¯MPa; molar NH3:Na fill ratioâ¯=â¯20:1) on {0â¯0â¯0â¯1} and {1â¯0â¯1¯â¯0}-orientation GaN seeds. Knowledge of the fluid temperature combined with mass-change measurements of the polycrystalline source and seed crystals has enabled the distinction of three growth regimes: a mass transport-limited regime at internal fluid density differences below 1.2â¯mol/L between dissolution and growth zones; a surface reaction-limited regime above the aforementioned critical fluid density difference and below growth zone fluid temperatures of â¼570â¯Â°C; and an apparent loss of solvent-limited regime above growth zone fluid temperatures of â¼570â¯Â°C. Analysis of growth in [0â¯0â¯0â¯1], [0â¯0â¯0â¯1¯], and [1â¯0â¯1¯â¯0] has enabled the determination of activation energies of each respective GaN crystallographic orientation in the surface reaction-limited regime.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 501, 1 November 2018, Pages 74-80
Journal: Journal of Crystal Growth - Volume 501, 1 November 2018, Pages 74-80
نویسندگان
S. Griffiths, S. Pimputkar, J. Kearns, T.F. Malkowski, M.F. Doherty, J.S. Speck, S. Nakamura,