کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148354 | 1524331 | 2018 | 21 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE
ترجمه فارسی عنوان
خواص لایه های آلومینیوم با استفاده از آمونیاک با استفاده از آمپول مایع با استفاده از مایع سافیر سقفی
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
چکیده انگلیسی
AlN epilayer properties (120â¯nm thick) grown by ammonia assisted molecular beam epitaxy on c-sapphire substrates with different low temperature AlN buffer layers (LT-BL) have been studied. The role of the LT-BL on the AlN structural and optical properties was investigated as a function of the LT-BL thickness and growth temperature. Optimum growth conditions were identified with LT-BL thickness of 3â¯nm and growth temperature between 480â¯Â°C and 520â¯Â°C. It was shown that by optimizing these conditions, a reduction of both mixed and edge threading dislocation densities up to 75% is achieved. The impact of the growth temperature of the AlN epilayer was also studied showing an additional improvement of the AlN crystal and morphological properties while growing at higher temperature. A correlation between the epilayer strain and the PL emission was also investigated. Finally, an Al0.7Ga0.3N:Si doped layer was grown on the top of the optimized AlN template showing a smooth surface with monoatomic steps and a roughness â¼0.2â¯nm, confirming the potential of such templates for the fabrication of AlGaN based heterostructures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 499, 1 October 2018, Pages 40-46
Journal: Journal of Crystal Growth - Volume 499, 1 October 2018, Pages 40-46
نویسندگان
Samuel Matta, Julien Brault, Maxim Korytov, Thi Quynh Phuong Vuong, Catherine Chaix, Mohamed Al Khalfioui, Philippe Vennéguès, Jean Massies, Bernard Gil,