کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795889 | 1524485 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
MOVPE growth conditions of the novel direct band gap, diluted nitride Ga(NAsP) material system pseudomorphically strained on GaP-substrate
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: MOVPE growth conditions of the novel direct band gap, diluted nitride Ga(NAsP) material system pseudomorphically strained on GaP-substrate MOVPE growth conditions of the novel direct band gap, diluted nitride Ga(NAsP) material system pseudomorphically strained on GaP-substrate](/preview/png/1795889.png)
چکیده انگلیسی
Multi-quantum well heterostructures (MQWHs) in the novel dilute nitride Ga(NAsP)/GaP material system have been grown pseudomorphically strained on GaP-substrate by metal organic vapour phase epitaxy (MOVPE). The group V-incorporation has been clarified as a function of growth temperature, chemical composition, gas phase V/V-ratios and macroscopic strain. An overall complex incorporation behaviour of the group V-atoms is observed. The precise adjustment of the V/V competition processes on the crystal surface allows, however, for a control of the solid composition of the Ga(NAsP)/GaP material system.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 298, January 2007, Pages 121-125
Journal: Journal of Crystal Growth - Volume 298, January 2007, Pages 121-125
نویسندگان
B. Kunert, K. Volz, J. Koch, W. Stolz,