کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8151222 | 1524436 | 2014 | 28 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
In situ X-ray diffraction monitoring of GaInN/GaN superlattice during organometalic vapor phase epitaxy growth
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: In situ X-ray diffraction monitoring of GaInN/GaN superlattice during organometalic vapor phase epitaxy growth In situ X-ray diffraction monitoring of GaInN/GaN superlattice during organometalic vapor phase epitaxy growth](/preview/png/8151222.png)
چکیده انگلیسی
We observed the growth of the Ga0.80In0.20N (2Â nm)/GaN (3Â nm) superlattice (SL) structure by in situ X-ray diffraction (XRD) monitoring. The satellite peaks from the â1st to the +1st order can be obtained from these in situ XRD spectrums. From the full width at half maximums (FWHMs) of the 0th and â1st satellite peaks as a function of the SL periods, we observed a clear trend in each FWHM. It was found that by analyzing this trend along with florescence microscopic and transmission electron microscopic analysis, an analysis of the In segregation and misfit dislocation are possible. Accordingly, if we employ in situ XRD under various growth conditions, the optimization of the growth conditions will become easier because it would be possible to determine the number of periods at which In segregation and misfit dislocation increases by only one growth procedure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 393, 1 May 2014, Pages 108-113
Journal: Journal of Crystal Growth - Volume 393, 1 May 2014, Pages 108-113
نویسندگان
Taiji Yamamoto, Daisuke Iida, Yasunari Kondo, Mihoko Sowa, Shinya Umeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki,