کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1797463 1023789 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Zn enhancement during surfactant-mediated growth of GaInP and GaP
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Zn enhancement during surfactant-mediated growth of GaInP and GaP
چکیده انگلیسی

The addition of surfactants during organometallic vapor phase epitaxy (OMVPE) growth is a novel approach to controlling the surface processes and materials properties of the resultant epitaxial layers. The present work elucidates the effects of the surfactants Sb and Bi on dopant incorporation in GaP and GaInP. The effects of Sb and Bi surfactants are dramatic. The surfactants significantly increase the incorporation of the acceptor Zn in both GaP and GaInP. Also, increased H concentrations are observed. A simple mechanism is proposed to explain both the increase in Zn and H. These results suggest a simple and effective method for controlling the incorporation of dopants by adding a minute amount of surfactant during OMVPE growth.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 287, Issue 2, 25 January 2006, Pages 647–651
نویسندگان
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