Surface modifications induced by bismuth on (0Â 0Â 1) GaAs surfaces

We report the identification of reflectance difference (RD) spectra for GaAs (0 0 1) surfaces in the presence of small quantities of trimethylbismuth (TMBi) vapor under organometallic vapor phase epitaxy (OMVPE) conditions. An RD spectrum similar to that observed from the previously reported (3×8) Sb-terminated surface of GaAs is reported, suggesting strong similarities between the Bi and Sb terminated surfaces. Because of the low vapor pressure of Bi, it is stable under extended hydrogen purges at growth temperatures of 450∘C. Whereas As or Sb coverage typically saturates at 1-2 monolayers on the GaAs (0 0 1) surface under OMVPE conditions, no saturation of the Bi coverage is observed in this work. Extended exposure to TMBi results in the formation of Bi islands whose size increase with exposure time and TMBi concentration.