کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8151997 | 1524448 | 2013 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of AlN by pulsed and conventional MOVPE
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Aluminium nitride was grown on c-plane sapphire by metal organic vapor phase epitaxy (MOVPE) at temperatures of 1070 °C by a pulsed growth method and in continuous growth mode at temperatures up to 1270 °C. For both methods the V/III ratio was varied and different approaches for the growth start were investigated. The crystal quality was mainly characterized by scanning electron microscopy and high resolution X-ray diffraction which showed unusual line shape for certain samples. Both growth methods enabled the growth of more than 1μm thick, atomically flat, Al-polar layers with edge type dislocation densities in the order of 3Ã1010cmâ2 for pulsed samples and 5Ã109cmâ2 for conventionally grown samples.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 381, 15 October 2013, Pages 100-106
Journal: Journal of Crystal Growth - Volume 381, 15 October 2013, Pages 100-106
نویسندگان
Hanno Kröncke, Stephan Figge, Timo Aschenbrenner, Detlef Hommel,