Experimental study of the orientation dependence of indium incorporation in GaInN

Indium incorporation was studied on a wide variety of planes tilted from the c-plane towards either the a-plane or the m-plane, as well as on two additional planes that were tilted with respect to the a- and m-planes but normal to the c-plane. It was found that the indium content and the photoluminescence wavelength variation patterns are similar. The growth rates do not vary significantly with orientation except for (10-13) and (10-1-3). Indium incorporation was found to increase with reactor pressure except for (10-1-2) and (20-2-7). The change in indium incorporation efficiency with growth temperature is found to depend on the orientation.