Kinetics of dopant incorporation in GaAs grown by organometallic vapor-phase epitaxy

A diffusive capture reaction of dopant atoms by relevant host atoms, via the Rideal–Eley mechanism, in GaAs grown by organometallic vapor-phase epitaxy is shown to result in the dopant concentration in the crystal acquiring a dependence on pGapGa (which is proportional to the growth rate) in agreement with data on SAsSAs, ZnGaZnGa, and SiGaSiGa where pGapGa is the partial pressure of trimethylgallium in the input gas stream.