Effects of growth temperature on surface morphology of InP grown on patterned Si(0Â 0Â 1) substrates

We report on the selective area growth (SAG) of high quality InP layers on patterned (0 0 1)Si substrates at various growth temperatures by metal organic chemical vapor deposition. Thin InP and GaP layers were used as intermediate buffer layers between patterned Si surface and high temperature (HT) InP layer. The growth temperatures of HT InP layers on patterned substrate had strong effect on their growth behaviors including surface morphology. The SAG InP layers grown at 650 °C and 550 °C exhibited the typical {1 1 1} facets and the smooth (0 0 1) top surface, respectively. Anti-phase domain boundaries and defects were trapped by lateral sidewalls of the etched Si substrate. Through the defect necking effect within the etched Si surface, defect-free InP layers with atomically smooth surface were obtained at a growth temperature of 550 °C.