کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9829867 1524499 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
RHEED observation of the growth of chalcopyrite-type MnGeP2 on GaAs(0 0 1) substrate using Ge-buffer layer
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
RHEED observation of the growth of chalcopyrite-type MnGeP2 on GaAs(0 0 1) substrate using Ge-buffer layer
چکیده انگلیسی
Epitaxial growth of a novel chalcopyrite-type MnGeP2 has been investigated using an MBE technique. In order to improve the surface morphology of the films, an effect of introduction of a Ge buffer layer was investigated. This results in dramatic change of the RHEED pattern from spotty to streaky ones. Improvement of surface morphology was confirmed by SEM observation. We attribute the improvement to the crystallographic affinity of Ge with II-IV-V2 compounds and atomically flat surface of the buffer layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 278, Issues 1–4, 1 May 2005, Pages 478-481
نویسندگان
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