Selective growth of InP/InGaAs 〈0 1 0〉 ridges: Physical and optical characterization

The selective growth of InP/InGaAs ridges aligned along the 〈0 1 0〉 direction was studied using scanning electron microscopy and photoluminescence measurements. The ridges exhibit very smooth {1 1 0} sidewalls and (0 0 1) top facets. The diffusion of the group III species from the sidewalls to the top (0 0 1) surface was modelled to provide a predictive tool for determining ridge growth, and the optical properties of InGaAs QWs incorporated in the ridges. No growth occurs on the {1 1 0} sidewalls until the ridges complete due to the diffusion of In species to the top (0 0 1) facet. The situation for Ga is quite different, with no diffusion off the {1 1 0} facets observed, and little or no Ga being incorporated on the {1 1 0} surface before or after ridge completion.