کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795297 | 1524483 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
MBE growth of TlInGaAs/TlInP/InP SCH LD structures and their laser operation with low-temperature variation of lasing wavelength
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: MBE growth of TlInGaAs/TlInP/InP SCH LD structures and their laser operation with low-temperature variation of lasing wavelength MBE growth of TlInGaAs/TlInP/InP SCH LD structures and their laser operation with low-temperature variation of lasing wavelength](/preview/png/1795297.png)
چکیده انگلیسی
TlInGaAs/TlInP/InP separate confinement heterostructures (SCHs) were grown by gas-source molecular-beam epitaxy and metal stripe laser diodes (LDs) were fabricated. Temperature variation of electroluminescence (EL) peak wavelength was as small as 0.01Â nm/K. Pulsed laser operation was achieved at 77-302Â K. Threshold current density for the TlInGaAs/TlInP/InP SCH LD (0.6Â kA/cm2 at 77Â K) was smaller than that for the TlInGaAs/InP double heterostructure LD (0.8Â kA/cm2 at 77Â K). This is due to the increased refractive index of TlInP and the improved optical confinement. Temperature variation of main peak wavelength in the lasing spectra was as small as 0.06Â nm/K. This is smaller than that of InGaAsP/InP DFB LDs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volumes 301â302, April 2007, Pages 109-112
Journal: Journal of Crystal Growth - Volumes 301â302, April 2007, Pages 109-112
نویسندگان
A. Fujiwara, D. Krishnamurthy, T. Matsumoto, S. Hasegawa, H. Asahi,