کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489477 | 1524367 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Control of GaP nanowire morphology by group V flux in gas source molecular beam epitaxy
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Control of GaP nanowire morphology by group V flux in gas source molecular beam epitaxy Control of GaP nanowire morphology by group V flux in gas source molecular beam epitaxy](/preview/png/5489477.png)
چکیده انگلیسی
GaP nanowires (NWs) were grown on a Si substrate by gas source molecular beam epitaxy using self-assisted growth. Selective-area growth was achieved using a patterned oxide mask. Periodic GaAsP marker layers were introduced during growth to study the growth progression using transmission electron microscopy. We demonstrate control of the NW morphology via the V/III flux ratio, the pattern pitch, and the oxide hole diameter. As the V/III flux ratio was increased from 1 to 6, the NWs showed a reduced top diameter and increased height. Reduced oxide hole diameter and increased V/III flux ratio caused the Ga droplet to be consumed partway through the growth for some NWs, leading to a switch from VLS group V limited growth to diffusion limited growth.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 462, 15 March 2017, Pages 29-34
Journal: Journal of Crystal Growth - Volume 462, 15 March 2017, Pages 29-34
نویسندگان
P. Kuyanov, J. Boulanger, R.R. LaPierre,