کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489730 | 1524372 | 2017 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Advacancy-mediated atomic steps kinetics and two-dimensional negative island nucleation on ultra-flat Si(111) surface
ترجمه فارسی عنوان
سینتیک گام های اتمی متشکل از پیشگامان و هسته ی جزء منفی دو بعدی بر روی سطح سی 111 فوق العاده تخت
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
چکیده انگلیسی
We have investigated Si(111) surface morphology transformations during high-temperature sublimation and oxygen treatments by means of in situ ultrahigh vacuum reflection electron microscopy. By analyzing atomic steps kinetics and two-dimensional negative (vacancy) islands nucleation on ultra-flat Si(111) surface with extremely wide (up to 120 μm in size) terraces we have estimated the activation energy associated with the surface-bulk vacancy exchange processes. We show that atomic steps motion and negative islands nucleation kinetics at temperatures above 1180 °C can be described by the step-flow model of Burton, Cabrera and Frank taking into account advacancies formation. By comparing experimental results with predictions of model we conclude that the surface mass transport at temperatures above 1180 °C is governed by surface vacancies nucleation and interaction with atomic steps rather than via adatoms surface diffusion.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 457, 1 January 2017, Pages 196-201
Journal: Journal of Crystal Growth - Volume 457, 1 January 2017, Pages 196-201
نویسندگان
S.V. Sitnikov, A.V. Latyshev, S.S. Kosolobov,