کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489065 | 1524351 | 2017 | 28 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of basal plane stacking faults on the (0001¯) facet of heavily nitrogen-doped 4H-SiC single crystals during physical vapor transport growth
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The formation of stacking faults in heavily nitrogen-doped (mid-1019 cmâ3) 4H-SiC boules grown by the physical vapor transport (PVT) growth method was investigated by studying surface morphologies on the (0001¯) facet of the boules. Low-voltage scanning electron microscopy (LVSEM) observations detected stacking faults on the (0001¯) facet of heavily nitrogen-doped 4H-SiC crystals. LVSEM and atomic force microscopy (AFM) studies revealed that the stacking faults showed characteristic morphologies, which stemmed from the interaction between stacking faults and surface steps. These observations also revealed that heavy nitrogen doping resulted in the nucleation of a number of surface hillocks on the (0001¯) facet; the hillocks were never observed on the facet of conventionally doped (nitrogen concentration: mid-1018 cmâ3) 4H-SiC boules. Furthermore, the hillocks were nucleated only on the facet and never observed on the outer regions of the facet. Based on these results, the stacking fault formation mechanism in heavily nitrogen-doped 4H-SiC crystals is discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 478, 15 November 2017, Pages 174-179
Journal: Journal of Crystal Growth - Volume 478, 15 November 2017, Pages 174-179
نویسندگان
Kohei Ohtomo, Nana Matsumoto, Koji Ashida, Tadaaki Kaneko, Noboru Ohtani, Masakazu Katsuno, Shinya Sato, Hiroshi Tsuge, Tatsuo Fujimoto,