کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8149769 | 1524404 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of (7Ã7)-“1Ã1” phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si (111)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Influence of (7Ã7)-“1Ã1” phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si (111) Influence of (7Ã7)-“1Ã1” phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si (111)](/preview/png/8149769.png)
چکیده انگلیسی
The step-flow growth condition of Si on Si (111) near the (7Ã7)-“1Ã1” surface phase transition temperature TC is analysed within the framework of Burton-Cabrera-Frank theory. In particular, coexistence of both surface phases well below TC and their specific influence on the step-flow growth behaviour is considered. We presume that under dynamical condition of growth, the surface initially covered by only the (7Ã7) phase separates into domains surrounded by “1Ã1” areas. On such a surface, the overall supersaturation should be reduced drastically compared to a surface with only (7Ã7), resulting in much larger critical terrace width for nucleation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 425, 1 September 2015, Pages 154-157
Journal: Journal of Crystal Growth - Volume 425, 1 September 2015, Pages 154-157
نویسندگان
Andreas Fissel, Ayan Roy Chaudhuri, Jan Krügener, H. Jörg Osten,