کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489849 | 1524374 | 2016 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Peculiarities of strain relaxation in linearly graded InxGa1âxAs/GaAs(001) metamorphic buffer layers grown by molecular beam epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This paper presents a comprehensive study of structural, optical and electrical properties of heterostructures with linearly graded InxGa1âxAs metamorphic buffer layers (MBLs) grown by molecular beam epitaxy on GaAs (001) substrates. The low density of threading dislocations (well below 106 cmâ2) in 1-μm-thick In0.3Ga0.7As layers grown atop of the linearly graded InxGa1âxAs/GaAs MBLs has been confirmed by using transmission electron microscopy (TEM). X-ray diffraction (XRD) data demonstrate good agreement between the experimentally measured In step-back and its calculations in the frames of existing models. Combining the XRD reciprocal space maps (RSM) of the structures and the spatially-resolved selective area electron diffraction measurements by cross-sectional TEM in depth-profiled RSM diagrams allowed direct visualization of the strain relaxation dynamics during the MBL growth. Strong effect of the azimuth angle and the value of an unintentional initial miscut of nominally (001) oriented GaAs substrate on the strain relaxation dynamics was observed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 455, 1 December 2016, Pages 83-89
Journal: Journal of Crystal Growth - Volume 455, 1 December 2016, Pages 83-89
نویسندگان
S.V. Sorokin, G.V. Klimko, I.V. Sedova, A.A. Sitnikova, D.A. Kirilenko, M.V. Baidakova, M.A. Yagovkina, T.A. Komissarova, K.G. Belyaev, S.V. Ivanov,