کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1789636 | 1524385 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nanoheteroepitaxy of GaN on AlN/Si(111) nanorods fabricated by nanosphere lithography
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Nanoheteroepitaxy of GaN on AlN/Si(111) nanorods fabricated by nanosphere lithography Nanoheteroepitaxy of GaN on AlN/Si(111) nanorods fabricated by nanosphere lithography](/preview/png/1789636.png)
چکیده انگلیسی
Nanoheteroepitaxy (NHE) of GaN on an AlN/Si(111) nanorod structure was investigated by metal-organic chemical vapor deposition. Silica nanosphere lithography was employed to fabricate a periodic hexagonal nanorod array with a narrow gap of 30Â nm between the nanorods. We were successful in obtaining a fully coalesced GaN film on the AlN/Si(111) nanorod structure. Transmission electron microscopy revealed that threading dislocation (TD) bending and termination by stacking faults occurred near the interface between GaN and the AlN/Si(111) nanorods, resulting in the reduction of TD density for the NHE GaN layer. The full width at half-maximum of the X-ray rocking curve for (102) plane of the NHE GaN was found to decrease down to 728Â arcsec from 1005Â arcsec for the GaN layer on a planar AlN/Si(111) substrate, indicating that the crystalline quality of the NHE GaN was improved. Also, micro-Raman measurement showed that tensile stress in the NHE GaN layer was reduced significantly as much as 70% by introducing air voids between the nanorods.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 444, 15 June 2016, Pages 9-13
Journal: Journal of Crystal Growth - Volume 444, 15 June 2016, Pages 9-13
نویسندگان
Donghyun Lee, In-Su Shin, Lu Jin, Donghyun Kim, Yongjo Park, Euijoon Yoon,