Growth evolution and microstructural characterization of semipolar (112̄2) GaN selectively grown on etched r-plane sapphire
Keywords: A3 رسوبات بخار شیمیایی فلزات; A1. High resolution x-ray diffraction; A3. Metalorganic chemical vapor deposition; A3. Selective epitaxy; B1. Nitrides; B2. Semiconducting III–V materials