کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793018 | 1023663 | 2011 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Epitaxial lateral overgrowth of non-polar GaN(1Â 1ÌÂ 0Â 0) on Si(1Â 1Â 2) patterned substrates by MOCVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
m-Plane GaN was grown selectively by metal-organic chemical vapor deposition (MOCVD) on patterned Si(1Â 1Â 2) substrates, where grooves aligned parallel to the Siã1Â 1Â 0ã direction were formed by anisotropic wet etching to expose the vertical Si{1Â 1Â 1} facets for growth initiation. The effect of growth conditions (substrate temperature, chamber pressure, and ammonia and trimethylgallium flow rates) on the growth habits of GaN was studied with the aim of achieving coalesced m-plane GaN films. The epitaxial relationship was found to be GaN(1Â 1ÌÂ 0Â 0) || Si(1Â 1Â 2), GaN[0Â 0Â 0Â 1] || Si[1Â 1Â -1], GaN[1ÌÂ 1ÌÂ 2Â 0] || Si[1Â 1ÌÂ 0]. Among all growth parameters, the ammonia flow rate was revealed to be the critical factor determining the growth habits of GaN. The distribution of extended defects, such as stacking faults and dislocations, in the selectively grown GaN were studied by transmission electron microscopy in combination with spatially resolved cathodoluminescence and scanning electron microscopy. Basal-plane stacking faults were found in the nitrogen-wing regions of the laterally overgrown GaN, while gallium-wings were almost free of extended defects, except for the regions near the GaN/Si{1Â 1Â 1} vertical sidewall interface, where high dislocation density was observed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 314, Issue 1, 1 January 2011, Pages 129-135
Journal: Journal of Crystal Growth - Volume 314, Issue 1, 1 January 2011, Pages 129-135
نویسندگان
N. Izyumskaya, S.J. Liu, V. Avrutin, X.F. Ni, M. Wu, Ã. Ãzgür, S. Metzner, F. Bertram, J. Christen, L. Zhou, David J. Smith, H. Morkoç,