کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1792752 | 1023656 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Strain variation in p-GaN by different spacer layers in the light emitting diodes and their microstructural and emission behaviors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Strain variation in p-GaN by different spacer layers in the light emitting diodes and their microstructural and emission behaviors Strain variation in p-GaN by different spacer layers in the light emitting diodes and their microstructural and emission behaviors](/preview/png/1792752.png)
چکیده انگلیسی
InGaN/GaN multiple quantum well-based blue light emitting diodes (LEDs) with different spacer layer structures were grown by metalorganic chemical vapor deposition. Fast-Fourier-transformed high-resolution transmission electron microscopy was used to determine the influence of the strain status in the spacer layer on Mg distribution and device performance. A comparison of the (1 1¯ 0 0) planar distance showed that the high-temperature grown InGaN layer in the spacer had a high level of stored strain. This led to the formation of a continuous facet contrast induced by Mg segregation in the p-layer, which was responsible for the deterioration of the electroluminescence performance of the LEDs. These results show that the delicate control of stored strain in nitride films is important for improving the device performance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 14, 1 July 2010, Pages 2128-2132
Journal: Journal of Crystal Growth - Volume 312, Issue 14, 1 July 2010, Pages 2128-2132
نویسندگان
Bo Hyun Kong, Hyung Koun Cho, Mi Yang Kim, Rak Jun Choi, Bae Kyun Kim,