کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148567 | 1524339 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low-temperature MOCVD deposition of Bi2Te3 thin films using Et2BiTeEt as single source precursor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Low-temperature MOCVD deposition of Bi2Te3 thin films using Et2BiTeEt as single source precursor Low-temperature MOCVD deposition of Bi2Te3 thin films using Et2BiTeEt as single source precursor](/preview/png/8148567.png)
چکیده انگلیسی
Et2BiTeEt was used as single source precursor for the deposition of Bi2Te3 thin films on Si(1â¯0â¯0) substrates by metal organic chemical vapor deposition (MOCVD) at very low substrate temperatures. Stoichiometric and crystalline Bi2Te3 films were grown at 230â¯Â°C, which is approximately 100â¯Â°C lower compared to conventional MOCVD processes using one metal organic precursors for each element. The Bi2Te3 films were characterized using scanning electron microscopy, high-resolution transmission electron microscopy and X-ray diffraction. The elemental composition of the films, which was determined by energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy, was found to be strongly dependent of the substrate temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 490, 15 May 2018, Pages 77-83
Journal: Journal of Crystal Growth - Volume 490, 15 May 2018, Pages 77-83
نویسندگان
Georg Bendt, Sanae Gassa, Felix Rieger, Christian Jooss, Stephan Schulz,